Breakthroughs in Analog and RF Circuit Performance through Steep-Slope FinFETs
نویسندگان
چکیده
Fin-shaped Field-Effect Transistors} (FinFETs) with Three Independent Gates (TIG) have been recently demonstrated capable of an ultra-steep-slope operation down to 3.4mV/dec. In this paper, we explore their opportunities in the domain of analog design and terahertz detectors. We see that they could result in analog circuits with 25× power efficiency improvement and in THz detectors with 2 orders of magnitude higher sensitivity.
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